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The high-precision silicon resonant pressure sensor, based on the Micro-Electro-Mechanical System (MEMS) technology, with its ultra-high sensitivity, long-term stability, and anti-interference ability, is becoming the core component for the intelligent upgrading of industries, providing a brand-new solution for precise measurement.
I. Physical Principle and Core Architecture II. Groundbreaking Technological Advantages III. Technological Evolution Directions IV. Cutting - edge Application Scenarios
I.Sensor - related Factors Structural Design: Resonator Structure: Support Structure: Electrode Arrangement: Material Properties: The Elastic Modulus of Silicon Material: Piezoresistive Coefficient: Temperature Coefficient: II. Environmental Factors Temperature: Humidity: Rate of Pressure Change: Electromagnetic Interference: III. Measurement Circuit Factors Excitation Signal Source: Signal Detection and Processing Circuit:
