At 250°C, the leakage current of SOI chips is only 0.1% of that in traditional chips. They have been verified to operate continuously for over 1,000 hours without degradation, while ordinary chips suffer a 20% accuracy drop at 150°C. Sensitivity of monocrystalline silicon film piezoresistive strips reaches 150mV/MPa, 3 times higher than polysilicon materials. The SOI structure optimizes the signal-to-noise ratio to 120dB, ensuring data fluctuation within < ±0.01%FS under strong electromagnetic interference—far exceeding industry standards.